发明名称 INTEGRATED MEMS DEVICE AND CONTROL CIRCUIT
摘要 An integrated circuit includes a silicon-on-insulator (SOI) substrate including a buried oxide layer positioned between a top-side silicon layer and a bottom-side silicon layer. A micro-electromechanical system (MEMS) device is integrated into the top-side silicon layer. A semiconductor layer is formed over the bottom-side silicon layer. A control circuit is integrated into the semiconductor layer and is configured to control the MEMS device.
申请公布号 US2009261416(A1) 申请公布日期 2009.10.22
申请号 US20080105989 申请日期 2008.04.18
申请人 RABERG WOLFGANG;WINKLER BERNHARD 发明人 RABERG WOLFGANG;WINKLER BERNHARD
分类号 H01L49/00;H01L21/44 主分类号 H01L49/00
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