发明名称 |
INTEGRATED MEMS DEVICE AND CONTROL CIRCUIT |
摘要 |
An integrated circuit includes a silicon-on-insulator (SOI) substrate including a buried oxide layer positioned between a top-side silicon layer and a bottom-side silicon layer. A micro-electromechanical system (MEMS) device is integrated into the top-side silicon layer. A semiconductor layer is formed over the bottom-side silicon layer. A control circuit is integrated into the semiconductor layer and is configured to control the MEMS device.
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申请公布号 |
US2009261416(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20080105989 |
申请日期 |
2008.04.18 |
申请人 |
RABERG WOLFGANG;WINKLER BERNHARD |
发明人 |
RABERG WOLFGANG;WINKLER BERNHARD |
分类号 |
H01L49/00;H01L21/44 |
主分类号 |
H01L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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