| 摘要 |
A nonvolatile semiconductor memory device includes a semiconductor substrate of a first conductivity type, a pair of source and drain diffusion regions of a second conductivity type oppositely formed on a surface of the semiconductor substrate, and a stacked structure having a gate insulating film, a charge accumulation film, an interlayer insulating film and a control gate which are formed in order on a channel region of the surface of the semiconductor substrate interposed between the source and drain diffusion regions. An edge of the stacked structure in the vicinity of the source region is formed away from a junction position between the source diffusion region and the channel region.
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