发明名称 |
SEMICONDUCTOR DEVICES FOR HIGH POWER APPLICATION |
摘要 |
Semiconductor devices for high voltage application are presented. A high power semiconductor device includes a first type doped semiconductor substrate and a second type doped epitaxial layer deposited thereon. A first type doped body region is disposed in the second type doped epitaxial layer. A heavily doped drain region is formed in the second type doped epitaxial layer and isolated from the first type doped body region with an isolation region and a channel. A second type deep heavily doped region extends from the heavily doped drain region to the semiconductor substrate. A pair of inversed type heavily doped source regions is disposed in the first type doped body region. A gate electrode is disposed overlying the channel with a dielectric layer interposed therebetween. The high power semiconductor device is isolated from the other semiconductor devices with a first type deep heavily doped region.
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申请公布号 |
US2009261409(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20080265580 |
申请日期 |
2008.11.05 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TSAI HUNG-SHERN;LIN GEENG-LIH;LIANG WEN-JYA |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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