发明名称 |
NANOWIRE WRAP GATE DEVICES |
摘要 |
<p>The present invention provides a semiconductor device comprising at least a first semiconductor nanowire (105) having a first lengthwise region (121) of a first conductivity type, a second lengthwise region (122) of a second conductivity type, and at least a first wrap gate electrode (111) arranged at the first region (121) of the nanowire (105) in order to vary the charge carrier concentration in the first lengthwise region (121) when a voltage is applied to the first wrap gate electrode (111). Preferably a second wrap gate electrode (112) is arranged at the second lengthwise region (122). Thereby tuneable artificial junctions (114) can be accomplished without substantial doping of the nanowire (105).</p> |
申请公布号 |
WO2009128777(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
WO2009SE50388 |
申请日期 |
2009.04.15 |
申请人 |
QUNANO AB;OHLSSON, JONAS;SAMUELSON, LARS;LIND, ERIK |
发明人 |
OHLSSON, JONAS;SAMUELSON, LARS;LIND, ERIK |
分类号 |
B82B1/00;H01L29/06;H01L29/12;H01L29/775;H01L29/778 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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