| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad capable of achieving high speed polishing and excellent in polishing characteristics, and also capable of easily cleaning a polished material after polishing, even when hydrophobic materials such as a silicon wafer and a low dielectric insulating body are polished. <P>SOLUTION: There are provided a polishing pad obtained by cleaning by solvent a polishing pad containing 0.1 to 50 mass% of a water-soluble substance having 1 g/100 g or more solubility into water at 25°C, and a polishing method for polishing a polished material by using the polishing pad. A silicon wafer is preferable as the polished material. <P>COPYRIGHT: (C)2010,JPO&INPIT |
