摘要 |
<p>Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) 2 } 2 Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.</p> |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
CHEN, PHILIP S.H.;HUNKS, WILLIAM;CHEN, TIANNIU;STENDER, MATTHIAS;XU, CHONGYING;ROEDER, JEFFREY R.;LI, WEIMIN;HENDRIX, BRYAN C.;CAMERON, THOMAS M.;STAUF, GREGORY T. |