| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which achieves reduction in development defects and combines the reduction with lines with roughness (LWR), and to provide a pattern forming method. <P>SOLUTION: The positive resist composition contains two kinds of resins each of which has a repeating unit selected from among general formulas (1) to (6) and has solubility in an alkali developing solution increased by action of an acid, and the pattern forming method is also provided. In the formulas, the symbols each represent a predetermined atom or group. <P>COPYRIGHT: (C)2010,JPO&INPIT |
