发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce breakage, chipping and warpage of a wafer while keeping rigidity of the wafer, and restraining production cost thereof. Ž<P>SOLUTION: The backside of a wafer 1 with a surface structure of a device formed on the front surface is flatly polished. Next, a resist film is applied to the backside of the wafer 1, and a mask pattern is transferred thereto to form a grid-like resist pattern. Next, a grid-like rib 13 is formed on the backside of the wafer 1 by etching the backside of the wafer 1, and a step between the center part and an outer peripheral end of the wafer 1 is eliminated. Then, the grid-like rib 13 is formed on the backside corresponding to scrub lines on the front surface of the wafer 1. Next, the backside of the wafer 1 is stuck to a stage by an adhesive tape, and is cut along the scrub lines by a dicing blade. Next, cut chips 14 are peeled from the adhesive tape. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009246198(A) 申请公布日期 2009.10.22
申请号 JP20080092240 申请日期 2008.03.31
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD 发明人 OI HIROYUKI
分类号 H01L21/306;H01L21/301;H01L21/3065 主分类号 H01L21/306
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