| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of manufacturing steps of a thin film transistor panel. Ž<P>SOLUTION: A scanning line 5 and an electrostatic protection ring 12 are connected to each other through an electrostatic protection element 13 having electrodes 41 and 42 and a connecting wire 43. An interlayer insulating film 29 is formed on the upper surface of a gate insulating film 22 including the electrostatic protection element 13, and contact holes 44, 45 and 46 are formed therein by photolithography. The connecting wire 43 is connected to the scanning line 5 and one electrode 41 particularly through contact holes 44 and 45 on the upper surface of the interlayer insulating film 29. In this case, the contact hole 44 is formed so as to continue to the interlayer film 29 and the gate insulating film 22, whereby the contact hole forming step can be reduced once. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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