发明名称 Semiconductor Device and Method for Manufacturing the Same
摘要 An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
申请公布号 US2009261414(A1) 申请公布日期 2009.10.22
申请号 US20090423563 申请日期 2009.04.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OIKAWA YOSHIAKI;KAJIWARA MASAYUKI;NAKADA MASATAKA;JINTYOU MASAMI;YAMAZAKI SHUNPEI
分类号 H01L29/786;H01L21/56;H01L21/768 主分类号 H01L29/786
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