| 摘要 |
A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave. |
