| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to semiconductor light-emitting devices, particularly to light-emitting diodes based on solid solutions of group three metal nitrides. In the semiconductor light-emitting heterostructure based on solid solutions of group three metal nitrides AlxInyGa1-(X+y)N (0ëñxëñ1, 0ëñyëñ1) with a p-n junction, containing a sequence of epitaxial layers, which form a region with p-conductivity type, in which an active region is formed, with a series of quantum wells, and a region with n-conductivity type, in which there is a current-limiting layer, according to the invention, thickness of barriers separating quantum wells is of the order of several nanometres. ^ EFFECT: invention allows for increasing external quantum efficiency by reducing probability of nonradiating Auger recombination. ^ 1 dwg |
