发明名称 |
Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets |
摘要 |
Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.
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申请公布号 |
US7604907(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20050243401 |
申请日期 |
2005.10.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DOO-YOUL;OH SEOK-HWAN;YEO GI-SUNG;WOO SANG-GYUN;LEE SOOK;PARK JOO-ON;JUNG SUNG-GON |
分类号 |
G03F1/68;G03F1/70;G03F7/20;H01L21/027 |
主分类号 |
G03F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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