发明名称 Internal voltage generator of semiconductor memory device
摘要 An internal voltage generator is capable of supplying a stable internal voltage regardless of an unstable external voltage. The internal voltage includes a first level detecting unit configured to detect a voltage level of the internal voltage and output an output power detecting signal, an oscillating unit configured to produce a periodical signal in response to the output power detecting signal, a second level detecting unit configured to detect a voltage level of an external voltage and output a driving power detecting signal, a dividing unit configured to selectively divide the periodical signal in response to the driving power detecting signal and output a divided signal, and a charge pumping unit configured to provide the internal voltage by pumping the external voltage in response to the divided signal.
申请公布号 US7605639(B2) 申请公布日期 2009.10.20
申请号 US20070966810 申请日期 2007.12.28
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 GOU JA-SEUNG
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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