发明名称 VAPOR DEPOSITION SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a vapor deposition system capable of reducing defects of a vapor-deposited film. Ž<P>SOLUTION: The vapor deposition system 1 for executing the vapor deposition of a material for vapor deposition on a substrate 11 is provided with: a crucible 21 for storing the material for vapor deposition; a heating means 30 for heating the crucible 21; and a charging member 40 which charges the splash to be possibly generated from the material for vapor deposition having low purity in the crucible 21, and is provided in a vicinity of an opening part 29 of the crucible 21 and charged in order to capture the splash before it reaches the substrate 11. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009235480(A) 申请公布日期 2009.10.15
申请号 JP20080082485 申请日期 2008.03.27
申请人 SEIKO EPSON CORP 发明人 HOSODA TOSHIKO;TACHIKI HIROYUKI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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