| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a platelike nitride semiconductor crystal having a desired principal plane with a simple method. <P>SOLUTION: A platelike nitride semiconductor crystal is grown on a seed crystal 109 by supplying a starting material gas to a seed crystal 109. The seed crystal 109 has a ratio (L/W) of a length L in a longitudinal direction to a maximum width W ranging from 2 to 400 of the projection plane, in which the crystal growth plane on the seed crystal is projected in the direction of growth, and has the maximum width W of not more than 5 mm. The crystal growth plane of the seed crystal 109 is at least one plane selected from a group consisting of +C plane, ä10-1X} plane and ä11-2Y} plane. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
