| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method in which a direct bonding wafer having less interface defects such as a void and a blister is manufactured. SOLUTION: The manufacturing method for the direct bonding wafer having a structure wherein a bond wafer and a base wafer are stuck directly together not across an insulating film includes at least a stage of performing HF processing on surfaces of the bond wafer and base wafer to be stuck together to terminate the surfaces with hydrogen, a stage of subjecting the bond wafer and base wafer to a heat treatment in an inert gas to desorb the terminating hydrogen from the surfaces to be stuck, and a stage of sticking the bond wafer and base wafer together. COPYRIGHT: (C)2010,JPO&INPIT |
