| 摘要 |
PROBLEM TO BE SOLVED: To increase a photoelectric flow rate in a thin-film photodiode in which a pin structure semiconductor layer is disposed, in parallel with a substrate. SOLUTION: The thin-film photodiode is provided with: a thin-film cell portion including a first semiconductor layer 131 consisting of a p-type semiconductor formed on the substrate 11; a second semiconductor layer 132 formed so as to contact the first semiconductor layer 131 on the substrate 11 and consisting of a p-type semiconductor or an i-type semiconductor having impurity concentration lower than that of the first semiconductor layer 131 and a third semiconductor layer 133 formed so as to contact the second semiconductor layer 132 on the substrate 11 and consisting of an n-type semiconductor layer; and a microlens 19 formed on the upper part of the thin-film cell portion and having the position of the center of an optical axis, between a boundary of the second semiconductor layer 132 and the third semiconductor layer 133, and the center of the second semiconductor layer 132. COPYRIGHT: (C)2010,JPO&INPIT
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