发明名称 |
METHODS FOR MANUFACTURING A HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR USING A HYBRID ORIENTATION TECHNOLOGY WAFER |
摘要 |
Methods for manufacturing a high voltage junction field effect transistor. The method includes forming an opening extending from a top surface of a device layer of a hybrid orientation technology (HOT) wafer through the device layer and an insulating layer to expose a portion of a bulk layer, and filling the opening with epitaxial semiconductor material having the crystalline orientation of the bulk layer. The method further includes forming first and second p-n junctions in the epitaxial semiconductor material that are arranged in depth within the epitaxial semiconductor material between the second semiconductor layer and the top surface of the first semiconductor layer.
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申请公布号 |
US2009258464(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080099904 |
申请日期 |
2008.04.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAMILLO-CASTILLO RENATA;GAUTHIER, JR. ROBERT J.;PHELPS RICHARD A.;STRICKER ANDREAS D. |
分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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