发明名称 |
BARRIEREFILM FÜR FLEXBILBES KUPFERSUBSTRAT UND SPUTTERTARGET ZUR BILDUNG EINES BARRIEREFILMS |
摘要 |
<p>Provided are a barrier film for a flexible copper substrate comprising a Co-Cr alloy film containing 5 to 30wt% of Cr and a balance of unavoidable impurities and Co, having a film thickness of 3 to 150nm, and film thickness uniformity of 10% or less at 1Ã; and a sputtering target for forming a barrier film comprising a Co-Cr alloy containing 5 to 30wt% of Cr and a balance of unavoidable impurities and Co, wherein the relative magnetic permeability in the in-plane direction of the sputtered face is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling in inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch, and have barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.</p> |
申请公布号 |
DE602005016432(D1) |
申请公布日期 |
2009.10.15 |
申请号 |
DE20056016432T |
申请日期 |
2005.07.25 |
申请人 |
NIPPON MINING & METALS CO. LTD. |
发明人 |
IRUMATA, S.;YAMAKOSHI, Y. |
分类号 |
C23C14/14;C23C14/16;C23C14/34;H05K3/16;H05K3/38 |
主分类号 |
C23C14/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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