| 摘要 |
PURPOSE: A method for forming a resistance pattern of a semiconductor device is provided to reduce a line width variation according to a position by wiring separated resistors with a fixed pattern. CONSTITUTION: Unit resistor patterns are formed in the same layer about a predetermined resistor region. The unit resistor patterns are divided into a first unit resistor pattern(A1~A9) which forms a first resistor and a second unit resistor pattern(B1~B9) which forms a second resistor. The unit resistor patterns include a first connection pattern which connects the first unit resistor patterns and a second connection pattern which connects the second unit resistor patterns. The first resistor and the second resistor are symmetrical about the center of the resistor region.
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