METHOD FOR MANUFACTURING OF SILICON WAFER IMPROVED IN NANOTOPOGRAPHY

摘要

PURPOSE: A wafer manufacturing method capable of improving nano-topography is provided to reduce a cost by omitting measurement of a complex nano-topography. CONSTITUTION: An ingot is cut into a wafer shape. Both surfaces of the cut wafer are mechanically polished. A defect and damage due to a lapping process are removed. A defect due to an etching process is removed. A surface of the cut wafer is polished. In the lapping process, a shape of a bottom surface plate of a lapping device is measured with a fixed cycle(S10). If flatness of the shape of the bottom surface plate of the lapping device is larger than a first reference value(S20), a front and back side of the wafer is turned over in a process to be progressed after the lapping process(S30).