| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently suppress metal contamination of a lower surface of a silicon substrate even when a heating temperature of a heat treatment apparatus is made high. SOLUTION: The heat treatment apparatus 4 for heat-treating the silicon substrate W includes a placing table 23 for placing and heating the silicon substrate W thereon, wherein a cover 35 made of any of silicon, silicon carbide, and aluminum nitride is placed on an upper surface of the placing table 23. By covering the upper surface of the placing table 23 by the cover 35 made of silicon or the like, the metal contamination of the lower surface of the silicon substrate W is suppressed. COPYRIGHT: (C)2010,JPO&INPIT |
