METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To restrain dispersion of parasitic resistance in a field effect transistor on a product lot basis, and to restrain dispersion of resistance of a resistance element. SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming a resistor and a gate insulation film on a semiconductor substrate; forming a gate electrode on the gate insulation film; forming sidewall spacers on a side surface of a gate electrode and a side surface of the resistor; forming a first insulation film containing nitrogen on the semiconductor substrate with the sidewall spacers formed thereon; implanting ions in the semiconductor substrate with the first insulation film thereon; forming a second insulation film containing nitrogen on the first insulation film with ions implanted therein; and carrying out etching to leave the first insulation film and the second insulation film on the resistor. COPYRIGHT: (C)2010,JPO&INPIT