| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspecting method for a compound semiconductor substrate, in which quality is evaluated with high precision during inspection on a compound semiconductor substrate having a multilayer structure. Ž<P>SOLUTION: The inspecting method for the compound semiconductor substrate 10 having a buffer layer and a GaN layer stacked in order on a semiconductor substrate includes a step (S1) of exposing a cross section in the stacking direction of the buffer layer and GaN layer, a step (S2) of irradiating the exposed cross section with laser light and evaluating stress at three points of the buffer layer and GaN layer in the section, and the interface between the buffer layer and GaN layer, and a step (S3) of plotting stress values of the stress at the three points on a coordinate surface showing stress values on its longitudinal axis and measurement positions on its lateral axis, and determining whether the compound semiconductor substrate 10 is good or not based on positions of the three plotted points on the coordinate surface. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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