| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which includes a magnetic material, which forms antiferromagnetic combination with full Heusler alloy high in spin polarization rate, and which is high in TMR (tunnel magnetoresistance ratio). Ž<P>SOLUTION: An insulating layer 12 is formed on a ferromagnetic layer 11. A full Heusler alloy layer 13 is formed on the insulating layer 12 and a ferromagnetic layer 14, having face-centered cubic lattice structure, is formed on the full Heusler alloy layer 13. Further, a non-magnetic layer 15 is formed on the ferromagnetic layer 14 and a ferromagnetic layer 16 is formed on the non-magnetic layer 15. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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