| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of controlling easily and freely distribution characteristics for process characteristics or an electron density on a substrate to be processed. SOLUTION: The capacity coupling type plasma processing device comprises an upper electrode divided into an inside upper electrode 60 and an outside upper electrode 62 in a radial direction, and a first and a second direct current voltages V<SB>C</SB>, V<SB>E</SB>independent of two variable DC power source 80, 82 are applied simultaneously to both of upper electrodes 60, 62. Uniformity in etching characteristics and plasma processing are improved in various applications by appropriately selecting the optimal combination of two DC voltages V<SB>C</SB>, V<SB>E</SB>. COPYRIGHT: (C)2010,JPO&INPIT
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