发明名称 SHOWER PLATE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a shower plate capable of suppressing the amount of formation of reaction products with the shower plate when performing treatment using a corrosive gas. Ž<P>SOLUTION: The shower plate 100 has such a composition that an anodized aluminum film 110 is formed on the surface of an aluminum plate 102. The anodized aluminum film 110 has not a porous layer where micro pores are formed and has a film thickness of 0.3 μm or less. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009235522(A) 申请公布日期 2009.10.15
申请号 JP20080084671 申请日期 2008.03.27
申请人 NEC ELECTRONICS CORP 发明人 NAKAMURA YASUHIKO
分类号 C25D11/04;C23C16/455;H01L21/3065;H01L21/31 主分类号 C25D11/04
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