A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.
申请公布号
EP2109161(A1)
申请公布日期
2009.10.14
申请号
EP20090154334
申请日期
2009.03.04
申请人
XEROX CORPORATION
发明人
WU, YILIANG;PAN, HUALONG;LIU, PING;LI, YUNING;SMITH, PAUL F.