发明名称 PHASE CHANGE MEMORY DEVICE
摘要 <p>PURPOSE: A phase change memory device is provided to improve data retention by making a contact region small and reducing power consumption. CONSTITUTION: A phase change memory device is composed of a first electrode, a second electrode, a phase change material pattern(45), and a phase change assistant pattern(65). The phase change material pattern is interposed between the first electrode and the second electrodes, and the phase change assistant pattern contacts with a single-side of the phase change material pattern at least. The phase change assistant pattern includes a compound such as a chemical formula DaMb[GxTy]c: the formula is satisfied 0<=a /(a+b+c) <=0.20<=b /(a+b+c) <=0.10.3<=x /(x+y) <=0.7.</p>
申请公布号 KR20090107320(A) 申请公布日期 2009.10.13
申请号 KR20080032765 申请日期 2008.04.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, DOO HWAN;HA, YONG HO;KANG, MYUNG JIN;PARK, JEONG HEE;KWON, HYUN SUK
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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