发明名称 |
PHASE CHANGE MEMORY DEVICE |
摘要 |
<p>PURPOSE: A phase change memory device is provided to improve data retention by making a contact region small and reducing power consumption. CONSTITUTION: A phase change memory device is composed of a first electrode, a second electrode, a phase change material pattern(45), and a phase change assistant pattern(65). The phase change material pattern is interposed between the first electrode and the second electrodes, and the phase change assistant pattern contacts with a single-side of the phase change material pattern at least. The phase change assistant pattern includes a compound such as a chemical formula DaMb[GxTy]c: the formula is satisfied 0<=a /(a+b+c) <=0.20<=b /(a+b+c) <=0.10.3<=x /(x+y) <=0.7.</p> |
申请公布号 |
KR20090107320(A) |
申请公布日期 |
2009.10.13 |
申请号 |
KR20080032765 |
申请日期 |
2008.04.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, DOO HWAN;HA, YONG HO;KANG, MYUNG JIN;PARK, JEONG HEE;KWON, HYUN SUK |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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