发明名称 Method for conditioning a microelectronics device deposition chamber
摘要 The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber 100. This method comprises placing an undercoat on the walls of a deposition chamber 100 and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.
申请公布号 US7601639(B2) 申请公布日期 2009.10.13
申请号 US20070759380 申请日期 2007.06.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PAVONE SALVATOR F.;NEW JASON J
分类号 H01L21/44 主分类号 H01L21/44
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