| 摘要 |
Charge storage stacks containing hetero-structure variable silicon richness nitride for memory cells and methods for making the charge storage stacks are provided. The charge storage stack can contain a first insulating layer on a semiconductor substrate; n charge storage layers comprising silicon-rich silicon nitride on the first insulating layer, wherein numbers of the charge storage layers increase from the bottom to the top and a k-value of an n-1th charge storage layer is higher than a k-value of an nth charge storage layer; n-1 dielectric layers comprising substantially stoichiometric silicon nitride between each of the n charge storage layers; and a second insulating layer on the nth charge storage layers.
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