发明名称 Configurable memory architecture with built-in testing mechanism
摘要 A configurable memory architecture includes a built-in testing mechanism integrated in said memory to support very efficient built-in self-test in Random Access Memories (RAMs) with greatly reduced overhead, in terms of area and speed. Memories can fail at high speed due to glitches (unwanted pulses which can at times behave as invalid clocks and destroy the functionality of synchronous systems) produced in decoding, the slow precharge of bitlines or the slow sensing of the sense amplifiers. The memory architecture incorporates structured DFT techniques to separately detect these failures.
申请公布号 US7603603(B2) 申请公布日期 2009.10.13
申请号 US20060441815 申请日期 2006.05.26
申请人 STMICROELECTRONICS PVT. LTD. 发明人 DUBEY PRASHANT
分类号 G01R31/28;G01R31/26;G11C29/00 主分类号 G01R31/28
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