| 摘要 |
PURPOSE:To improve the crystallinity of an thin film and to increase a magnetic Kerr rotating angle by forming the thin film consisting of a compd. having Heusler's alloy type crystal structure by using a confronted target type sputtering method. CONSTITUTION:Elements which can form the compd. (A) of the Heuser's alloy type crystal structure are used for the targets 1, 2 of a confronted target type sputtering device and are sputtered on a substrate 9, by which the thin film consisting of the compd. A is formed thereon. The compd. A is preferably PtMnSb. The use of the composite targets composed of Pt and Mn for both the targets 1, 2 and the use of the target composed of Mn to one thereof and the composite target composed of Pt and Sb to the other are possible at the time of forming said thin film. The temp. of the substrate 9 is preferably maintained at 200-500 deg.C during sputtering.
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