| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to reduce a process time by forming a bottom electrode through etching of a bottom insulation film. CONSTITUTION: A sacrificial insulation film(210) is formed on a semiconductor substrate(200). A bottom anti-reflective film(220) is formed on the sacrificial insulation film. A photosensitive pattern(230) for defining a bottom electrode region is formed on the bottom anti-reflective film. The bottom anti-reflective film and the sacrificial insulation film are etched by using the photosensitive pattern as a mask. A bottom electrode region(240) is formed by performing a second etching process. The photosensitive pattern is removed.</p> |
