| 摘要 |
FIELD: electric engineering. ^ SUBSTANCE: invention is related to the field of electric engineering, in particular to material and manufacturing of thin-film resistors with precision characteristics from it. Material for manufacturing of thin-film resistors contains chrome, iron, aluminium, silicon dioxide, aluminium oxide, nickel and cerium dioxide at the following quantitative ratio of components, in wt %: chrome - 1131, iron - 7.511.2, aluminium - 4.39.8, silicon dioxide -17.541.7, titanium - 5.612.6, aluminium oxide - 1.22.7, nickel - 3.217.6, cerium dioxide - 0.61.3. ^ EFFECT: additional introduction of aluminium oxide, nickel and cerium dioxide provides for production of thin-film resistors with specific surface resistance from 400 Ohm to 1000 Ohm and TRC (temperature resistance coefficient) 15ù10-6 degrees-1 with good resistors yield of 100%, and at TRC of 10ù10-6 1/C with yield of good resistors of 90-100% in each manufactured batch in range of temperatures from 20 to 125C, and in range of temperatures from -60 to +20C it has more linear dependence of TRC on temperature, equal to 10-15ù10-6 degrees-1 with stability of 0,01% for 2000 hours at rated load at ambient air temperature of 85C. ^ 1 tbl |
