| 摘要 |
A sputtering apparatus is so constituted that film qualities such as a film thickness distribution or a specific resistance can be substantially homogenized all over the surface of a treated substrate when a predetermined thin film is formed by a reactive sputtering. Between a plurality of sputter chambers (11a and 11b) in which targets (31a to 31h) of an equal number are equidistantly juxtaposed, a treated substrate (S) is transferred to positions confronting the individual targets. An electric power is thrown into the individual targets in the sputter chambers, in which the treated substrate exists, so that the individual targets are sputtered to laminate identical or different thin films on the surface of the treated substrate. At this time, the stop position of the treated substrate is so changed that the portion of the treated substrate surface to confront the region between the individual targets may shift between the mutually continuing sputter chambers.
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