| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which does not cause current leak from an electrode and element breakdown and moreover can control the degradation in element characteristics. <P>SOLUTION: The semiconductor device includes a semiconductor laminating part having a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type, a first conductor side electrode connected to the semiconductor layer of the first conductivity type, and a second conductor side electrode connected to the semiconductor layer of the second conductor type. The semiconductor device is characterized in that the second conductor side electrode and an insulating film covering the semiconductor laminating part are arranged separately via an isolating region, a first metal layer is provided on the surface of the insulating film, and a second metal layer formed of a material different from that of the first metal layer is provided on the surface of the second conductor side electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
