| 发明名称 |
VERFAHREN ZUM VERSIEGELN ZWEIER PLATTEN MIT AUSBILDUNG EINES OHMSCHEN KONTAKTS DAZWISCHEN |
| 摘要 |
<p>Bonding of two plates (2, 12) of semiconductor materials, comprises: - (a) implantation of metal species (4) in at least the first plate; - (b) assembly of the first and second plates, by molecular adherence; - (c) formation of metal compounds, alloyed between the implanted metal species and the semiconductor materials of the two plates. - An INDEPENDENT CLAIM is also claimed for the structure obtained by this method.</p> |
| 申请公布号 |
DE602004022860(D1) |
申请公布日期 |
2009.10.08 |
| 申请号 |
DE20046022860T |
申请日期 |
2004.12.21 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
POCAS, STEPHANE;MORICEAU, HUBERT;MICHAUD, JEAN-FRANCOIS |
| 分类号 |
H01L21/18;H01L21/265;H01L21/266 |
主分类号 |
H01L21/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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