发明名称 |
SELECTIVE DEPOSITION OF SIGE LAYERS FROM SINGLE SOURCE OF SI-GE HYDRIDES |
摘要 |
<p>Single-source silyl-germanes hydrides can be used to deposit Gei_xSix seamlessly, conformally and selectively in the "source/drain" regions of prototypical transistors, leading to potentially significant performance gains derived from mobility enhancement, and applications in optoelectronics. Low-temperature heteroepitaxy (300 - 430 0C) produces monocrystalline microstructures, smooth and continuous surface morphologies and low defect densities. Strain engineering can be achieved by incorporating the entire SiGe content of precursors into the film.</p> |
申请公布号 |
WO2009123926(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
WO2009US38568 |
申请日期 |
2009.03.27 |
申请人 |
ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THESTATE OF ARIZONA ACTG FOR & ON BEHALF ...;KOUVETAKIS, JOHN;FANG, YAN-YAN |
发明人 |
KOUVETAKIS, JOHN;FANG, YAN-YAN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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