| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the uniformity and yield of a plasma processing process by allowing plasma density profile to be controlled easily and arbitrarily. <P>SOLUTION: A plasma processing apparatus, in which a susceptor 12 is radially divided into two portions (that is, a susceptor center electrode 12A and a susceptor surrounding electrode 12B), is configured so that high-frequency power from a high-frequency power supply 16 is preferentially fed onto the susceptor surrounding electrode 12B via a lower power feed conductor 18 for high-frequency discharge or plasma generation, and at the same time the high-frequency power is also fed, at a variable dividing ratio, onto the susceptor center electrode 12A via a variable-capacitance coupling portion 28. <P>COPYRIGHT: (C)2010,JPO&INPIT |
