| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mark forming method, capable of measuring a position with high precision, when forming and processing a mask having a plurality of layers in manufacturing a semiconductor device. <P>SOLUTION: The method includes a first mask layer forming step for forming a first mask layer on a semiconductor substrate; a first pattern forming step for forming at least three or more first patterns having periodicity in the first mask layer; a second mask layer forming step for forming a second mask layer on the first mask layer in which the first pattern is formed; and a mark forming step for forming an opening in the second mask layer so that at least two patterns at the end part of the three or more first patterns are covered and form a mark, including the first pattern exposed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
