摘要 |
<p>A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.</p> |
申请人 |
APPLIED MATERIALS, INC.;RATHI, SUDHA;KIM, EUI KYOON;KIM, BOK HOEN;SEAMONS, MARTIN JAY;SCHMITT, FRANCIMAR C. |
发明人 |
RATHI, SUDHA;KIM, EUI KYOON;KIM, BOK HOEN;SEAMONS, MARTIN JAY;SCHMITT, FRANCIMAR C. |