| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor device having a structure for realizing proper characteristics. SOLUTION: The semiconductor device includes a plurality of first gate electrodes 31 electrically connected each other; a plurality of first field-effect transistors, containing a plurality of first sources electrically connected each other and a plurality of first drains electrically connected to one another; a plurality of second gate electrodes 32 electrically connected to one another; a plurality of second field-effect transistors, containing a plurality of second sources electrically connected each other and a plurality of second drains electrically connected to one another; and a plurality of dummy gate electrodes 33, where each of the first gate electrode is separated from each of the second gate electrode. The first gate electrode, the second gate electrode, and the dummy gate electrode are disposed in one direction and are arranged mutually parallel. At least one dummy gate electrode is arranged between the first gate electrode and the second gate electrode which mutually adjoin. COPYRIGHT: (C)2010,JPO&INPIT |
