发明名称 MOSFET Parametric Amplifier
摘要 A circuit includes an input terminal adapted to receive an input voltage, a MOSFET having its drain terminal and its source terminal connected together, a first switching arrangement configured to be controlled by a first clock signal and adapted to selectively couple the gate terminal to the input terminal, and a further switching arrangement configured to be controlled by a further clock signal in timing relationship with the first clock signal and adapted to selectively couple the source terminal and a first voltage which is capable of pulling carriers out of a channel when the first switching arrangement is not coupling the input terminal to the gate terminal.
申请公布号 US2009251196(A1) 申请公布日期 2009.10.08
申请号 US20090421930 申请日期 2009.04.10
申请人 TSIVIDIS YANNIS;RANGANATHAN SANJEEV 发明人 TSIVIDIS YANNIS;RANGANATHAN SANJEEV
分类号 H03K5/00;G06G7/12;H01L27/08;H01L27/148;H01L29/78;H03D7/12;H03F7/00 主分类号 H03K5/00
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