发明名称 |
MOSFET Parametric Amplifier |
摘要 |
A circuit includes an input terminal adapted to receive an input voltage, a MOSFET having its drain terminal and its source terminal connected together, a first switching arrangement configured to be controlled by a first clock signal and adapted to selectively couple the gate terminal to the input terminal, and a further switching arrangement configured to be controlled by a further clock signal in timing relationship with the first clock signal and adapted to selectively couple the source terminal and a first voltage which is capable of pulling carriers out of a channel when the first switching arrangement is not coupling the input terminal to the gate terminal.
|
申请公布号 |
US2009251196(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20090421930 |
申请日期 |
2009.04.10 |
申请人 |
TSIVIDIS YANNIS;RANGANATHAN SANJEEV |
发明人 |
TSIVIDIS YANNIS;RANGANATHAN SANJEEV |
分类号 |
H03K5/00;G06G7/12;H01L27/08;H01L27/148;H01L29/78;H03D7/12;H03F7/00 |
主分类号 |
H03K5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|