发明名称 |
Non-volatile memory device and method of manufacturing the same |
摘要 |
A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.
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申请公布号 |
US2009251963(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20090385201 |
申请日期 |
2009.04.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL KWANG-SOO;PARK YOON-DONG;KIM SUK-PIL |
分类号 |
G11C16/04;G11C16/06;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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