发明名称 |
N-TYPE SCHOTTKY BARRIER TUNNEL TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.
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申请公布号 |
US2009250756(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20090485777 |
申请日期 |
2009.06.16 |
申请人 |
KIM YARK YEON;JANG MOON GYU;SHIN JAE HEON;LEE SEONG JAE |
发明人 |
KIM YARK YEON;JANG MOON GYU;SHIN JAE HEON;LEE SEONG JAE |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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