| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon carbide MOS semiconductor device whose pressure-resistant non-defectiveness rate is hardly deteriorated even when a high impurity density surface is formed by ion injection of high doze quantity necessary for satisfactory ohmic contact. <P>SOLUTION: In a silicon carbide MOS semiconductor, a first conductive type pressure-resistant layer 3 and a second conductive type body region 5, and a second conductive type body contact region 7 and a first conductive source contact region 6 each formed by selective ion injection on the surface layer of the body region 5 are arranged on an SiC substrate, wherein source extension region 6-1 whose depth is larger than a tail section under the region 6, and whose impurity density is lower than that of the source contact region 6 is formed by selective ion injection under the region 6, and the surface of the body contact region 7 and the surface of the source contact region 6 have such high impurity density from which ohmic contact can be obtained, and the impurity density of the source extension region 6-1 is the impurity density which is less than 3×10<SP>19</SP>cm<SP>-3</SP>or equal to or more than 5×10<SP>18</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
