| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of stably detecting an etching endpoint even when a pattern occupation rate of an etching target is fine in dry etching in contact hole processing or the like. SOLUTION: In a method for detecting a dry etching endpoint, spectral analysis of plasma-emitted light is used in a dry etching process of a contact hole or the like. Then, time series data having an emission intensity ratio of two wavelengths are processed by secondary differential operation and an etching endpoint is detected on a second inflection point (just2) 402 to achieve stabilization in the detection of the etching endpoint. Further, by detecting abnormal discharge simultaneously with the detection of the etching endpoint, disturbance is removed and the stabilization in the detection of the etching endpoint can be achieved. COPYRIGHT: (C)2010,JPO&INPIT
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