| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent increase in the sheet resistance of a polysilicon film per batch. Ž<P>SOLUTION: Disclosed is a polysilicon film production method where a polysilicon film is formed on a substrate within a pressure-reduced reaction tube 3 by a vapor growth process, wherein the film formation is performed while feeding moisture by a moisture feeding means. According to this polysilicon film production method, since moisture is fed by the moisture feeding means, the increase in the sheet resistance of the polysilicon film to be formed per batch can be prevented. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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